Numerical modelling study of the sensitivity of SOS MOSFET characteristics to silicon film thickness and back surface trapped charge variation

Bertling, K., Rakic, A.D. and Yeow, Y.T. (2007). Numerical modelling study of the sensitivity of SOS MOSFET characteristics to silicon film thickness and back surface trapped charge variation. In: Faraone, L., Betts, S., Dell, J., Musca, C., Nener, B., Parish, G. and Wehner, J., COMMAD 2006: Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices. 2006 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2006), Perth, WA, (283-285). 6-8 December, 2006. doi:10.1109/COMMAD.2006.4429937


Author Bertling, K.
Rakic, A.D.
Yeow, Y.T.
Title of paper Numerical modelling study of the sensitivity of SOS MOSFET characteristics to silicon film thickness and back surface trapped charge variation
Conference name 2006 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2006)
Conference location Perth, WA
Conference dates 6-8 December, 2006
Convener Faraone, L.
Proceedings title COMMAD 2006: Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices
Journal name 2006 Conference On Optoelectronic and Microelectronic Materials
Place of Publication Piscataway, NJ, USA
Publisher IEEE
Publication Year 2007
Year available 2006
Sub-type Fully published paper
DOI 10.1109/COMMAD.2006.4429937
ISBN 1-4244-0578-5
Editor Faraone, L.
Betts, S.
Dell, J.
Musca, C.
Nener, B.
Parish, G.
Wehner, J.
Start page 283
End page 285
Total pages 3
Language eng
Subjects E1
290902 Integrated Circuits
240203 Condensed Matter Physics - Electronic and Magnetic Properties; Superconductivity
671201 Integrated circuits and devices
Q-Index Code E1
Q-Index Status Confirmed Code

 
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