Accurate Modeling of the Effects of Fringing Area Interface Traps on Scanning Capacitance Microscopy Measurement

Hong, Yang David, Yeow, YewTong, Chim, Wai Kin, Yan, Jian and Wong, Kin Mun (2006) Accurate Modeling of the Effects of Fringing Area Interface Traps on Scanning Capacitance Microscopy Measurement. IEEE Transactions on Electron Devices, 53 3: 499-506. doi:10.1109/TED.2005.864367

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Author Hong, Yang David
Yeow, YewTong
Chim, Wai Kin
Yan, Jian
Wong, Kin Mun
Title Accurate Modeling of the Effects of Fringing Area Interface Traps on Scanning Capacitance Microscopy Measurement
Journal name IEEE Transactions on Electron Devices   Check publisher's open access policy
ISSN 0018-9383
Publication date 2006-03-01
Sub-type Article (original research)
DOI 10.1109/TED.2005.864367
Open Access Status File (Author Post-print)
Volume 53
Issue 3
Start page 499
End page 506
Total pages 8
Editor D. P. Verret
Place of publication New York
Publisher IEEE-Inst Electrical Electronics Engineers Inc
Language eng
Subject 290901 Electrical Engineering
290900 Electrical and Electronic Engineering
290902 Integrated Circuits
671201 Integrated circuits and devices
Abstract Scanning capacitance microscopy (SCM) is a dopant profile extraction tool with nanometre spatial resolution. While it is based on the high-frequency MOS capacitor theory, there are crucial second-order effects which make the extraction of dopant profile from SCM data a challenging task. Due to small size of the SCM probe, the trapped charges in the interface traps at the oxide-silicon dioxide interface surrounding the probe significantly affect the measured SCM data through the fringing electric field created by the trapped charges. In this paper, we present numerical simulation results to investigate the nature of SCM dC/dV data in the presence of interface traps. The simulation takes into consideration the traps response to the ac signal used to measure dC/dV as well as the fringing field of the trapped charge surrounding the probe tip. In the study, we present an error estimation of experimental SCM dopant concentration extraction when the interface traps and fringing field are ignored. The trap distribution in a typical SCM sample is also investigated.
Keyword scanning capacitance microscopy
dopant profile extraction
semiconductor device modeling
interface traps
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Q-Index Code C1
Additional Notes Citation: Hong, Y. D. and Yeow, Y. T. and Chim, W. K. and Wong, K. M. and Kopanski, J. J. (2004) Influence of Interface Traps and Surface Mobility Degradation on Scanning Capacitance Microscopy Measurement. IEEE Transactions on Electron Devices 51(9):1496-1503. Digital Object Identifyer 10.1109/TED.2005.864367 Copyright (c) YYYY IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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Created: Tue, 09 May 2006, 10:00:00 EST by David Hong on behalf of School of Information Technol and Elec Engineering