Numerical method for determination of the NMR frequency of the single-qubit operation in a silicon-based solid-state quantum computer

Hui, H. T. (2006) Numerical method for determination of the NMR frequency of the single-qubit operation in a silicon-based solid-state quantum computer. Physical Review B, 74 19: . doi:10.1103/PhysRevB.74.195309

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Author Hui, H. T.
Title Numerical method for determination of the NMR frequency of the single-qubit operation in a silicon-based solid-state quantum computer
Journal name Physical Review B   Check publisher's open access policy
ISSN 1098-0121
Publication date 2006
Sub-type Article (original research)
DOI 10.1103/PhysRevB.74.195309
Open Access Status File (Publisher version)
Volume 74
Issue 19
Total pages 8
Editor P.D. Adams
Place of publication College Pk
Publisher American Physical Soc
Collection year 2006
Language eng
Subject C1
290901 Electrical Engineering
700302 Telecommunications
Abstract A numerical method is introduced to determine the nuclear magnetic resonance frequency of a donor (P-31) doped inside a silicon substrate under the influence of an applied electric field. This phosphorus donor has been suggested for operation as a qubit for the realization of a solid-state scalable quantum computer. The operation of the qubit is achieved by a combination of the rotation of the phosphorus nuclear spin through a globally applied magnetic field and the selection of the phosphorus nucleus through a locally applied electric field. To realize the selection function, it is required to know the relationship between the applied electric field and the change of the nuclear magnetic resonance frequency of phosphorus. In this study, based on the wave functions obtained by the effective-mass theory, we introduce an empirical correction factor to the wave functions at the donor nucleus. Using the corrected wave functions, we formulate a first-order perturbation theory for the perturbed system under the influence of an electric field. In order to calculate the potential distributions inside the silicon and the silicon dioxide layers due to the applied electric field, we use the multilayered Green's functions and solve an integral equation by the moment method. This enables us to consider more realistic, arbitrary shape, and three-dimensional qubit structures. With the calculation of the potential distributions, we have investigated the effects of the thicknesses of silicon and silicon dioxide layers, the relative position of the donor, and the applied electric field on the nuclear magnetic resonance frequency of the donor.
Keyword Physics, Condensed Matter
Donor States
Multilayered Media
Computation
Semiconductors
Germanium
Q-Index Code C1

Document type: Journal Article
Sub-type: Article (original research)
Collections: 2007 Higher Education Research Data Collection
School of Information Technology and Electrical Engineering Publications
 
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Created: Wed, 15 Aug 2007, 09:45:28 EST