Measuring geometric phases of scattering states in nanoscale electronic devices

Zhou, Huan-Qiang, Lundin, Urban, Cho, Sam Young and McKenzie, Ross H. (2004) Measuring geometric phases of scattering states in nanoscale electronic devices. Physical Review B, 69 11: 113308-113308. doi:10.1103/PhysRevB.69.113308

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Author Zhou, Huan-Qiang
Lundin, Urban
Cho, Sam Young
McKenzie, Ross H.
Title Measuring geometric phases of scattering states in nanoscale electronic devices
Journal name Physical Review B   Check publisher's open access policy
ISSN 1098-0121
Publication date 2004-03-15
Sub-type Article (original research)
DOI 10.1103/PhysRevB.69.113308
Open Access Status File (Publisher version)
Volume 69
Issue 11
Start page 113308
End page 113308
Total pages 4
Editor P D Adams
Place of publication USA
Publisher American Physical Society
Collection year 2004
Language eng
Subject C1
240202 Condensed Matter Physics - Structural Properties
780102 Physical sciences
Abstract We show how a quantum property, a geometric phase, associated with scattering states can be exhibited in nanoscale electronic devices. We propose an experiment to use interference to directly measure the effect of this geometric phase. The setup involves a double-path interferometer, adapted from that used to measure the phase evolution of electrons as they traverse a quantum dot (QD). Gate voltages on the QD could be varied cyclically and adiabatically, in a manner similar to that used to observe quantum adiabatic charge pumping. The interference due to the geometric phase results in oscillations in the current collected in the drain when a small bias across the device is applied. We illustrate the effect with examples of geometric phases resulting from both Abelian and non-Abelian gauge potentials.
Keyword Quantum Computation
Gauge-fields
Resonance
Theorem
Pump
Dot
Q-Index Code C1
Additional Notes DOI: 10.1113/PhysRevB.69.113308

 
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Created: Wed, 15 Aug 2007, 04:32:43 EST