Voltage control of exchange coupling in phosphorus doped silicon

Wellard, C.J., Hollenberg, L.C.L., Kettle, L. M. and Goan, H. S. (2004) Voltage control of exchange coupling in phosphorus doped silicon. Journal of Physics: Condensed Matter, 16 325697: 325697-325704. doi:10.1088/0953-8984/16/32/006


Author Wellard, C.J.
Hollenberg, L.C.L.
Kettle, L. M.
Goan, H. S.
Title Voltage control of exchange coupling in phosphorus doped silicon
Journal name Journal of Physics: Condensed Matter   Check publisher's open access policy
ISSN 0953-8984
Publication date 2004
Sub-type Article (original research)
DOI 10.1088/0953-8984/16/32/006
Volume 16
Issue 325697
Start page 325697
End page 325704
Total pages 8
Editor A M Stoneham
Place of publication United Kingdom
Publisher Institute of Physics Publishing
Collection year 2004
Language eng
Subject C1
240203 Condensed Matter Physics - Electronic and Magnetic Properties; Superconductivity
780102 Physical sciences
Abstract Motivated by applications to quantum computer architectures we study the change in the exchange interaction between neighbouring phosphorus donor electrons in silicon due to the application of voltage biases to surface control electrodes. These voltage biases create electro-static fields within the crystal substrate, perturbing the states of the donor electrons and thus altering the strength of the exchange interaction between them. We find that control gates of this kind can be used to either enhance or reduce the strength of the interaction, by an amount that depends both on the magnitude and orientation of the donor separation.
Keyword Physics, Condensed Matter
Quantum Computer
Operations
States
Q-Index Code C1

 
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