[0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1): Dedicated to Professor Fang-hua Li on the occasion of her 70th birthday

Liao, X. Z., Zou, J., Cockayne, D. J. H. and Matsumura, S. (2004) [0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1): Dedicated to Professor Fang-hua Li on the occasion of her 70th birthday. Ultramicroscopy, 98 2-4: 239-247.


Author Liao, X. Z.
Zou, J.
Cockayne, D. J. H.
Matsumura, S.
Title [0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1): Dedicated to Professor Fang-hua Li on the occasion of her 70th birthday
Journal name Ultramicroscopy  (ERA 2012 Listed)    (ERA 2010 Rank A)   Check publisher's open access policy
Publication date 2004
Sub-type Article
DOI 10.1016/j.ultramic.2003.08.017
Volume number 98
Issue number 2-4
ISSN 0304-3991
Start page 239
End page 247
Total pages 9
Editor P. Midgley
Place of publication Netherlands
Publisher Elsevier Science BV
Collection year 2004
Language eng
Subject C1
291499 Materials Engineering not elsewhere classified
291702 Optical and Photonic Systems
291804 Nanotechnology
780199 Other
Abstract Coherent Ge(Si)/Si(001) quantum dot islands grown by solid source molecular beam epitaxy at a growth temperature of 700degreesC were investigated using transmission electron microscopy working at 300 kV. The [001] zone-axis bright-field diffraction contrast images of the islands show strong periodicity with the change of the TEM sample substrate thickness and the period is equal to the effective extinction distance of the transmitted beam. Simulated images based on finite element models of the displacement field and using multi-beam dynamical diffraction theory show a high degree of agreement. Studies for a range of electron energies show the power of the technique for investigating composition segregation in quantum dot islands. (C) 2003 Elsevier B.V. All rights reserved.
Keyword Microscopy
Tem Characterization
Image Simulation
Quantum Dot
Transmission Electron-microscopy
Semiconductor Quantum Dots
Visible Luminescence
Ge Islands
Si(100)
Shape
Relaxation
Inclusion
Evolution
Images
Q-Index Code C1

 
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Created: Wed, 15 Aug 2007, 03:01:25 EST