The electric field effect on spin injection in tunneling regime

Wang, Jun, Sun, H. B. and Xing, D. Y. (2003) The electric field effect on spin injection in tunneling regime. Physics Letters A, 319 3-4: 367-372. doi:10.1016/j.physleta.2003.09.076


Author Wang, Jun
Sun, H. B.
Xing, D. Y.
Title The electric field effect on spin injection in tunneling regime
Journal name Physics Letters A   Check publisher's open access policy
ISSN 0375-9601
Publication date 2003
Sub-type Article (original research)
DOI 10.1016/j.physleta.2003.09.076
Volume 319
Issue 3-4
Start page 367
End page 372
Total pages 6
Editor V. M. Agranovich
A. R. Bishop
Place of publication Netherlands
Publisher Elsevier BV, North Holland
Collection year 2003
Language eng
Subject C1
240402 Quantum Optics and Lasers
780102 Physical sciences
Abstract Using the quantum tunneling theory, we investigate the spin-dependent transport properties of the ferromagnetic metal/Schottky barrier/semiconductor heterojunction under the influence of an external electric field. It is shown that increasing the electric field, similar to increasing the electron density in semiconductor, will result in a slight enhancement of spin injection in tunneling regime, and this enhancement is significantly weakened when the tunneling Schottky barrier becomes stronger. Temperature effect on spin injection is also discussed. (C) 2003 Elsevier B.V. All rights reserved.
Keyword Physics, Multidisciplinary
Ferromagnet-semiconductor Interface
Polarized Transport
Gate Control
Heterostructure
Electronics
Barrier
Diode
Gaas
Q-Index Code C1

Document type: Journal Article
Sub-type: Article (original research)
Collections: 2004 Higher Education Research Data Collection
School of Physical Sciences Publications
 
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Created: Wed, 15 Aug 2007, 02:04:08 EST