Electric-field-induced Mott insulating states in organic field-effect transistors

Cepas, Olivier P. and McKenzie, Ross H. (2002) Electric-field-induced Mott insulating states in organic field-effect transistors. Physical Review B, 66 21: 214528-1-214528-9. doi:10.1103/PhysRevB.66.214528

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Author Cepas, Olivier P.
McKenzie, Ross H.
Title Electric-field-induced Mott insulating states in organic field-effect transistors
Journal name Physical Review B   Check publisher's open access policy
ISSN 1098-0121
Publication date 2002-12-31
Year available 2002
Sub-type Article (original research)
DOI 10.1103/PhysRevB.66.214528
Open Access Status File (Publisher version)
Volume 66
Issue 21
Start page 214528-1
End page 214528-9
Total pages 9
Editor P. D. Adams
Place of publication New York
Publisher American Physical Society
Collection year 2002
Language eng
Subject C1
240204 Condensed Matter Physics - Other
780102 Physical sciences
Abstract We consider the possibility that the electrons injected into organic field-effect transistors are strongly correlated. A single layer of acenes can be modeled by a Hubbard Hamiltonian similar to that used for the κ-(BEDT-TTF)2X family of organic superconductors. The injected electrons do not necessarily undergo a transition to a Mott insulator state as they would in bulk crystals when the system is half-filled. We calculate the fillings needed for obtaining insulating states in the framework of the slave-boson theory and in the limit of large Hubbard repulsion U. We also suggest that these Mott states are unstable above some critical interlayer coupling or long-range Coulomb interaction.
Q-Index Code C1
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Created: Tue, 14 Aug 2007, 17:16:18 EST