Growth of catalyst-free epitaxial InAs nanowires on Si wafers using metallic masks

Soo, M. Teng, Zheng, Kun, Gao, Qiang, Tan, H. Hoe, Jagadish, Chennupati and Zou, Jin (2016) Growth of catalyst-free epitaxial InAs nanowires on Si wafers using metallic masks. Nano Letters, 16 7: 4189-4193. doi:10.1021/acs.nanolett.6b01064


Author Soo, M. Teng
Zheng, Kun
Gao, Qiang
Tan, H. Hoe
Jagadish, Chennupati
Zou, Jin
Title Growth of catalyst-free epitaxial InAs nanowires on Si wafers using metallic masks
Journal name Nano Letters   Check publisher's open access policy
ISSN 1530-6992
1530-6984
Publication date 2016-07-13
Year available 2016
Sub-type Letter to editor, brief commentary or brief communication
DOI 10.1021/acs.nanolett.6b01064
Open Access Status Not yet assessed
Volume 16
Issue 7
Start page 4189
End page 4193
Total pages 5
Place of publication Washington, DC, United States
Publisher American Chemical Society
Collection year 2017
Language eng
Abstract Development of heteroepitaxy growth of catalyst-free vertical III-V nanowires on Si wafers is highly desirable for future nanoscale Si-based electronic and optoelectronic devices. In this study, a proof-of-concept approach is developed for catalyst-free heteroepitaxy growth of InAs nanowires on Si wafers. Before the growth of InAs nanowires, a Si-compatible metallic film with a thickness of several tens of nanometers was predeposited on a Si wafer and then annealed to form nanosize openings so as to obtain a metallic mask. These nano-openings exposed the surface of the Si wafer, which allowed subsequent nucleation and growth of epitaxial InAs nanowires directly on the surface of the Si wafer. The small size of the nano-openings limits the lateral growth of the nanostructures but promotes their axial growth. Through this approach, catalyst-free InAs nanowires were grown on both Si (111) and (001) wafers successfully at different growth temperatures. In particular, ultralong defect-free InAs nanowires with the wurtzite structure were grown the Si (111) wafers at 550 °C using the Ni mask. This study offers a simple, cost-effective, and scalable method to grow catalyst-free III-V nanowires on Si wafers. The simplicity of the approach opens a new avenue for the growth and integration of catalyst-free high-quality heteroepitaxial III-V nanowires on Si wafers.
Keyword Catalyst-free
Heteroepitaxial
InAs nanowires
Metallic mask
Si wafers
Q-Index Code CX
Q-Index Status Provisional Code
Institutional Status UQ

 
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