SIMS analysis for detection of contaminants in thin film photovoltaics

Morris G.C., Lyons L.E., Tandon R.K. and Wood B.J. (1988) SIMS analysis for detection of contaminants in thin film photovoltaics. Nuclear Inst. and Methods in Physics Research, B, 35 3-4: 257-262. doi:10.1016/0168-583X(88)90280-7


Author Morris G.C.
Lyons L.E.
Tandon R.K.
Wood B.J.
Title SIMS analysis for detection of contaminants in thin film photovoltaics
Journal name Nuclear Inst. and Methods in Physics Research, B   Check publisher's open access policy
ISSN 0168-583X
Publication date 1988-12-02
Sub-type Article (original research)
DOI 10.1016/0168-583X(88)90280-7
Volume 35
Issue 3-4
Start page 257
End page 262
Total pages 6
Subject 2508 Surfaces, Coatings and Films
3105 Instrumentation
3110 Surfaces and Interfaces
Abstract Minor contaminants in electrodeposited thin film CdTe which produce efficient solar cells have been investigated by secondary ion mass spectroscopy (SIMS) using three different primary ions and three different SIMS instruments. To obtain SIMS data which represent what is present in the sample, a number of precautions must be taken. These are illustrated and positive SIMS data from an electrodeposited film show that it has fewer impurities than commercial crystal CdTe specified as 5N pure. The impurities in the film had not been intentionally added, so their source was investigated by SIMS and found to be the starting chemicals and deposition vessels. For quantification, inductively coupled plasma-atomic emission spectroscopy and atomic absorption spectroscopy of the deposition solutions provided upper limits for the impurity concentration.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import
 
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Created: Tue, 26 Jul 2016, 02:22:42 EST by System User