Electron-irradiation-induced damage recovery effects in lightly doped n- and p-type α-tin

Myhra, S. and Gardiner, R. B. (1975) Electron-irradiation-induced damage recovery effects in lightly doped n- and p-type α-tin. Journal of Applied Physics, 46 3: 1043-1048. doi:10.1063/1.322208

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Author Myhra, S.
Gardiner, R. B.
Title Electron-irradiation-induced damage recovery effects in lightly doped n- and p-type α-tin
Formatted title
Electron-irradiation-induced damage recovery effects in lightly doped n- and p-type α-tin
Journal name Journal of Applied Physics   Check publisher's open access policy
ISSN 0021-8979
1089-7550
Publication date 1975-03
Sub-type Article (original research)
DOI 10.1063/1.322208
Open Access Status File (Publisher version)
Volume 46
Issue 3
Start page 1043
End page 1048
Total pages 6
Place of publication Melville, NY, United States
Publisher A I P Publishing LLC
Language eng
Formatted abstract
The recovery of the electrical resistivity and thermoelectric power in a number of n− and p−type α−tin samples, irradiated at low temperature, is considered. Three distinct first−order stages in the temperature range 20−50 K are observed. A fractional defect recovery has been deduced such that relative percentages of IA : IB : IC =90 : 4 : 6 anneal in the three stages. Activation energy scaling factors were found to be 69, 94, and 122 meV, respectively, for the three stages. Carrier mobilities as functions of carrier and defect concentration were calculated and found to be in good agreement with previously published values. Estimates for these quantities were also deduced when the samples were near to their intrinsic states (nenh ). A close−pair−defect charge carrier trapping model provides a consistent explanation for all damage and recovery data.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Mathematics and Physics
 
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