Measurement and Numerical Modeling of Short-Channel MOSFET Gate Capacitances

Yeow Y.-T. (1987) Measurement and Numerical Modeling of Short-Channel MOSFET Gate Capacitances. IEEE Transactions on Electron Devices, 34 12: 2510-2520. doi:10.1109/T-ED.1987.23342


Author Yeow Y.-T.
Title Measurement and Numerical Modeling of Short-Channel MOSFET Gate Capacitances
Journal name IEEE Transactions on Electron Devices
ISSN 1557-9646
Publication date 1987
Sub-type Article (original research)
DOI 10.1109/T-ED.1987.23342
Volume 34
Issue 12
Start page 2510
End page 2520
Total pages 11
Subject 2208 Electrical and Electronic Engineering
2504 Electronic, Optical and Magnetic Materials
Abstract The gate-to-source and gate-to-drain capacitance of long-and short-channel n-MOSFET's have been measured and simulated using a two-dimensional numerical simulator that allows different inversion layer carrier mobility models to be used. Comparison of the experimental and simulated data indicates velocity saturation effect is seen in the capacitance data of the short-channel devices. Transverse-field dependence of the mobility is also found to be necessary to account for the experimental data. Copyright
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import
 
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Created: Tue, 12 Jul 2016, 01:31:30 EST by System User