Some properties of thin films of chemically deposited cadmium sulphide

Danaher W.J., Lyons L.E. and Morris G.C. (1985) Some properties of thin films of chemically deposited cadmium sulphide. Solar Energy Materials, 12 2: 137-148. doi:10.1016/0165-1633(85)90029-2


Author Danaher W.J.
Lyons L.E.
Morris G.C.
Title Some properties of thin films of chemically deposited cadmium sulphide
Journal name Solar Energy Materials
ISSN 0165-1633
Publication date 1985
Sub-type Article (original research)
DOI 10.1016/0165-1633(85)90029-2
Volume 12
Issue 2
Start page 137
End page 148
Total pages 12
Subject 2200 Engineering
Abstract Physical, optical and electrical properties of thin films of chemically deposited CdS are reported. As-deposited films were composed of hexagonal crystals with a diameter of 0.1 to 0.2 μm. The band gaps for as-deposited and hydrogen annealed samples were 2.45 and 2.38 eV, respectively. The resistivity of as-deposited films was ca. 109 ω cm and was lowered by both vacuum and hydrogen annealing. The resistivity was lower than 0.05 ω cm after annealing at 450°C in hydrogen saturated with Cd vapour. Atomic concentration measurements showed3the films to be stoichiometric, with hydrogen annealing having no detectable effect on the stoichiometry. X-ray photoelectron spectra showed that a surface layer of sulphate was present on both the single crystal and the film after air exposure. Secondary ion mass spectrometry revealed that the films contained impurities traceable to the deposition solution components, e.g. organics from the thiourea, chlorine, cadmium oxide and hydroxide. The impurities were not present in sufficient amounts to be detected by XPS. Hydrogen annealing the film reduced the concentration of impurities from the deposition solution, but introduced contaminants from the substrate.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import
 
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