Crystal morphology of unmodified aluminium-silicon eutectic microstructures

Shamsuzzoha M. and Hogan L.M. (1986) Crystal morphology of unmodified aluminium-silicon eutectic microstructures. Journal of Crystal Growth, 76 2: 429-439. doi:10.1016/0022-0248(86)90390-8


Author Shamsuzzoha M.
Hogan L.M.
Title Crystal morphology of unmodified aluminium-silicon eutectic microstructures
Journal name Journal of Crystal Growth   Check publisher's open access policy
ISSN 0022-0248
Publication date 1986-08-01
Sub-type Article (original research)
DOI 10.1016/0022-0248(86)90390-8
Volume 76
Issue 2
Start page 429
End page 439
Total pages 11
Subject 3104 Condensed Matter Physics
Abstract The crystallography of eutectic silicon in an unmodified A1-12.7 wt% Si alloy has been studied by transmission electron microscopy and diffraction of thin films cut from bulk samples. Twinning mechanisms are described by which the silicon changes direction or adjusts interflake spacing at the solid-liquid interface. The branching mechanism observed by previous workers is confirmed but found to be infrequent at moderate freezing rates. A side-branching mechanism is described which is considered to be the primary mechanism for branching in the wheatsheaf configuration. Orientation relationships between the eutectic silicon and aluminium phases are described. These differ from those previously observed in thin films drawn from the melt. It is proposed that orientation relationships vary with freezing rate. Evidence is presented that the eutectic aluminium re-nucleates repeatedly during growth of a single eutectic grain.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import
 
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Created: Tue, 28 Jun 2016, 05:21:49 EST by System User