Evaluation of localised trapped charge and interface states in MOSFETs through gate capacitances measurement

Ghodsi R., Yeow Y.T., Ling C.H. and Alam M.K. (1992). Evaluation of localised trapped charge and interface states in MOSFETs through gate capacitances measurement. In: Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, (505-507). August 26, 1992-August 28, 1992.

Author Ghodsi R.
Yeow Y.T.
Ling C.H.
Alam M.K.
Title of paper Evaluation of localised trapped charge and interface states in MOSFETs through gate capacitances measurement
Conference name Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
Conference location Tsukuba, Jpn
Conference dates August 26, 1992-August 28, 1992
Journal name Conference on Solid State Devices and Materials
Series Conference on Solid State Devices and Materials
Publisher Publ by Business Cent for Acad Soc Japan
Publication Year 1992
Sub-type Fully published paper
Start page 505
End page 507
Total pages 3
Subjects 2200 Engineering
Q-Index Code E1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Conference Paper
Collection: Scopus Import
 
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Created: Tue, 28 Jun 2016, 11:46:58 EST by System User