MOSFET substrate dopant profiling via inversion layer-to-substrate capacitance

Chiang Charles Y.T. and Yeow Y.T. (1997). MOSFET substrate dopant profiling via inversion layer-to-substrate capacitance. In: Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, (63-67). November 26, 1996-November 28, 1996.

Author Chiang Charles Y.T.
Yeow Y.T.
Title of paper MOSFET substrate dopant profiling via inversion layer-to-substrate capacitance
Conference name Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
Conference location Penang, Malaysia
Conference dates November 26, 1996-November 28, 1996
Journal name IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Series IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Publication Year 1997
Sub-type Fully published paper
Start page 63
End page 67
Total pages 5
Subjects 2200 Engineering
Q-Index Code E1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Conference Paper
Collection: Scopus Import
 
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Created: Tue, 28 Jun 2016, 01:39:42 EST by System User