Fabrication of a CuInS2 photoelectrode using a single-step electrodeposition with controlled calcination atmosphere

Tang, Yiming, Ng, Yun Hau, Yun, Jung-Ho and Amal, Rose (2014) Fabrication of a CuInS2 photoelectrode using a single-step electrodeposition with controlled calcination atmosphere. RSC Advances, 4 7: 3278-3283. doi:10.1039/c3ra45691a


Author Tang, Yiming
Ng, Yun Hau
Yun, Jung-Ho
Amal, Rose
Title Fabrication of a CuInS2 photoelectrode using a single-step electrodeposition with controlled calcination atmosphere
Formatted title
Fabrication of a CuInS2 photoelectrode using a single-step electrodeposition with controlled calcination atmosphere
Journal name RSC Advances   Check publisher's open access policy
ISSN 2046-2069
Publication date 2014
Year available 2013
Sub-type Article (original research)
DOI 10.1039/c3ra45691a
Open Access Status Not Open Access
Volume 4
Issue 7
Start page 3278
End page 3283
Total pages 6
Place of publication Cambridge, United Kingdom
Publisher Royal Society of Chemistry
Language eng
Formatted abstract
N-type CuInS2 thin films were fabricated by a one-step electrodeposition of Cu/In/S precursors on a transparent fluorine-doped tin oxide (FTO) substrate followed by calcination in a mixture of N2 and H2 at 500 °C without the need of toxic H2S gas for sulfurization. The analyses of structural and optical properties revealed that tetragonal chalcopyrite CuInS2 thin films were obtained when heat treated in a mixture of 8% H2 and 92% N2; whereas calcination in pure N2 resulted in the formation of CuInS2 with a considerable amount of In2O3 and CuxS impurities. The synthesized n-CuInS2 thin film has an optical bandgap of 1.3 eV with the conduction band at ca. -1.2 V vs. Ag/AgCl at pH 6.5. The heat treatment in a mixture of H2 and N2 provided a reducing atmosphere to suppress the oxide formation of the electrodeposited Cu/In/S elements. It also increased the donor density of CuInS2 sixfold by increasing the density of the sulfur vacancies (known to be electron donors) at the grain surface. As a result of the improved purity and increased donor density, the hydrogen treated CuInS2 thin film yielded a photocurrent density of ∼8 mA cm-2 at 0.5 V vs. Ag/AgCl in 0.25 M Na2S and 0.35 M Na2SO3 under visible light illumination, which is a fourfold enhancement as compared to that obtained from the CuInS2 film calcined in pure N2.
Keyword CuInS2 photoelectrode
Single-step electrodeposition
Controlled calcination atmosphere
Fluorine-doped tin oxide (FTO)
CuInS2 semiconductor
Energy conversion efficiency
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Chemical Engineering Publications
 
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