Characterisation of CdCl2 treated electrodeposited CdS/CdTe thin film solar cell

Das S.K. (1993) Characterisation of CdCl2 treated electrodeposited CdS/CdTe thin film solar cell. Solar Energy Materials and Solar Cells, 29 3: 277-287. doi:10.1016/0927-0248(93)90042-2


Author Das S.K.
Title Characterisation of CdCl2 treated electrodeposited CdS/CdTe thin film solar cell
Journal name Solar Energy Materials and Solar Cells   Check publisher's open access policy
ISSN 0927-0248
Publication date 1993
Sub-type Article (original research)
DOI 10.1016/0927-0248(93)90042-2
Volume 29
Issue 3
Start page 277
End page 287
Total pages 11
Subject 2105 Renewable Energy, Sustainability and the Environment
2504 Electronic, Optical and Magnetic Materials
2508 Surfaces, Coatings and Films
2200 Engineering
Abstract An over 10% efficient electrodeposited CdS/CdTe solar cell has been prepared after CdCl2 treatment. The open circuit voltage, Voc, short-circuit current, Jsc and fill factor, FF were 758 mV, 21 mA cm-2 and 0.65 respectively. The diode factor calculated from current-voltage-temperature measurements changed from 1.54 at 324 K to 2.64 at 146 K. The voltage factor, α ranged from 22.83 at 324 K to 29.46 at 146 K. Data from current-voltage-temperature measurements agrees with the model of Miller and Olsen and indicates that the current transport was a combination of tunneling and interface recombination. Capacitance-voltage-temperature measurements showed that capacitance decreased with increasing frequency and increased with temperature. Capacitance was insensitive to temperature indicating an intrinsic or low-doped depletion layer. The density of interface states was found to be 6.4 × 1010 cm-2 eV-1 at 293 K. The carrier concentration of CdTe calculated from Mott-Schottky plot was 1.5 × 1016 cm-3.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Scopus Import
 
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Created: Tue, 14 Jun 2016, 01:02:49 EST by System User