Interface state effects in GaN Schottky diodes

Ahaitouf, A., Srour, H., Hamady, S. Ould Saad, Fressengeas, N., Ougazzaden, A. and Salvestrini, J. P. (2012). Interface state effects in GaN Schottky diodes. In: Engineering of wide bandgap semiconductor materials for energy saving, Nice, France, (345-351). June 2011. doi:10.1016/j.tsf.2012.08.029


Author Ahaitouf, A.
Srour, H.
Hamady, S. Ould Saad
Fressengeas, N.
Ougazzaden, A.
Salvestrini, J. P.
Title of paper Interface state effects in GaN Schottky diodes
Conference name Engineering of wide bandgap semiconductor materials for energy saving
Conference location Nice, France
Conference dates June 2011
Journal name Thin Solid Films   Check publisher's open access policy
Place of Publication Amsterdam, Netherlands
Publisher Elsevier
Publication Year 2012
Sub-type Fully published paper
DOI 10.1016/j.tsf.2012.08.029
Open Access Status Not Open Access
ISSN 0040-6090
1879-2731
Volume 522
Start page 345
End page 351
Total pages 7
Language eng
Abstract/Summary Current voltage (I-V) and capacitance voltage (C-V) measurements have been performed versus temperature on GaN Schottky diodes. The results show an increase of the Schottky barrier height φ b and a decrease of the ideality factor n both with the increase of the temperature. We show that this behavior originates in the existence of an interface state density distribution, which is determined via the analysis of the temperature dependence of the I-V measurements, and allows the tunneling of the carriers from the semiconductor to the metal. Those interface states are shown to be responsible for interface inhomogeneities which result in two Gaussian voltage dependent Schottky barrier distributions. We show also that, in the presence of this interface state distribution, C-V measurements, without the correction of the built in voltage by taking into account the effect of both the high values of the ideality factor and series resistance, lead to erroneous values of the Schottky barrier height φ b.
Subjects 2504 Electronic, Optical and Magnetic Materials
2505 Materials Chemistry
2506 Metals and Alloys
2508 Surfaces, Coatings and Films
3110 Surfaces and Interfaces
Keyword GaN
Ideality factor
Interface states
Schottky barrier height
Q-Index Code E1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Conference Paper
Collection: Centre for Advanced Imaging Publications
 
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