Si epitaxial growth on LaAlO3(0 0 1)

Mortada, Hussein, Derivaz, Mickael, Dentel, Didier, Srour, Hussein and Bischoff, Jean-Luc (2009) Si epitaxial growth on LaAlO3(0 0 1). Surface Science, 603 9: L66-L69. doi:10.1016/j.susc.2009.03.012

Author Mortada, Hussein
Derivaz, Mickael
Dentel, Didier
Srour, Hussein
Bischoff, Jean-Luc
Title Si epitaxial growth on LaAlO3(0 0 1)
Journal name Surface Science   Check publisher's open access policy
ISSN 0039-6028
Publication date 2009-05-01
Sub-type Article (original research)
DOI 10.1016/j.susc.2009.03.012
Volume 603
Issue 9
Start page L66
End page L69
Total pages 1
Language eng
Subject 3110 Surfaces and Interfaces
3104 Condensed Matter Physics
2505 Materials Chemistry
2508 Surfaces, Coatings and Films
Abstract We report on the growth of Si on c(2 × 2) reconstructed LaAlO3(0 0 1) surfaces at high substrate temperature (700 °C) by molecular beam epitaxy. An initial Volmer-Weber mode is evidenced using reflection high energy electron diffraction (RHEED), X-ray photoelectron diffraction (XPD) and atomic force microscopy. After the deposition of a few monolayers, the islands coalesce. Using X-ray photoelectron spectroscopy, we demonstrate that Si islands exhibit an abrupt interface with the LaAlO3 substrate without formation of silicate or silica. Finally, combined RHEED and XPD measurements show the epitaxial growth of Si with a unique Si(0 0 1)//LaAlO3(0 0 1) and Si<1 0 0>//LAO<1 1 0> relationship.
Keyword High-k dielectrics
Lanthanum aluminate
Semiconductor-insulator interfaces
Single crystal epitaxy
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
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