Electron-beam writing of deoxygenated micro-patterns on graphene oxide film

Wu, Kuang-Hsu, Cheng, Han-Hao, Mohammad, Ali Amdad, Blakey, Idriss, Jack, Kevin, Gentle, Ian R. and Wang, Da-Wei (2015) Electron-beam writing of deoxygenated micro-patterns on graphene oxide film. Carbon, 95 738-745. doi:10.1016/j.carbon.2015.08.116


Author Wu, Kuang-Hsu
Cheng, Han-Hao
Mohammad, Ali Amdad
Blakey, Idriss
Jack, Kevin
Gentle, Ian R.
Wang, Da-Wei
Title Electron-beam writing of deoxygenated micro-patterns on graphene oxide film
Journal name Carbon   Check publisher's open access policy
ISSN 0008-6223
1873-3891
Publication date 2015-10-11
Sub-type Article (original research)
DOI 10.1016/j.carbon.2015.08.116
Open Access Status Not Open Access
Volume 95
Start page 738
End page 745
Total pages 8
Place of publication Kidlington, United Kingdom
Publisher Pergamon Press
Collection year 2016
Language eng
Abstract Electron-beam (e-beam) lithography at a low energy can efficiently write deoxygenated micro-patterns on graphene oxide (GO) films with high edge-definition. The deoxygenation caused by the secondary process of back-scattered electrons leads to a shrinkage of pattern height. A lower energy e-beam is found to be more effective in deoxygenating of GO than that by using a higher energy e-beam. The thickness and the oxygen-to-carbon atomic ratio of the pattern are strongly related that decreases progressively with increasing the electron dosage before reaching a steady level. In addition, as the electron dose increases the patterned area also expanded in lateral direction. The observations of the proximity effect are justified with our results and the Monte Carlo simulation of electrons trajectories. These results can be a guideline for the fabrication of all-carbon thin film electronics.
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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