Scalable Growth of High Mobility Dirac Semimetal Cd<inf>3</inf>As<inf>2</inf> Microbelts

Chen, Zhi-Gang, Zhang, Cheng, Zou, Yichao, Zhang, Enze, Yang, Lei, Hong, Min, Xiu, Faxian and Zou, Jin (2015) Scalable Growth of High Mobility Dirac Semimetal Cd<inf>3</inf>As<inf>2</inf> Microbelts. Nano Letters, 15 9: 5830-5834. doi:10.1021/acs.nanolett.5b01885

Author Chen, Zhi-Gang
Zhang, Cheng
Zou, Yichao
Zhang, Enze
Yang, Lei
Hong, Min
Xiu, Faxian
Zou, Jin
Title Scalable Growth of High Mobility Dirac Semimetal Cd3As2 Microbelts
Journal name Nano Letters   Check publisher's open access policy
ISSN 1530-6984
Publication date 2015-09-09
Year available 2015
Sub-type Article (original research)
DOI 10.1021/acs.nanolett.5b01885
Volume 15
Issue 9
Start page 5830
End page 5834
Total pages 5
Place of publication Washington, DC United States
Publisher American Chemical Society
Collection year 2016
Language eng
Formatted abstract
Three-dimensional (3D) Dirac semimetals are 3D analogues of graphene, which display Dirac points with linear dispersion in k-space, stabilized by crystal symmetry. Cd3As2 has been predicted to be 3D Dirac semimetals and was subsequently demonstrated by angle-resolved photoemission spectroscopy. As unveiled by transport measurements, several exotic phases, such as Weyl semimetals, topological insulators, and topological superconductors, can be deduced by breaking time reversal or inversion symmetry. Here, we reported a facile and scalable chemical vapor deposition method to fabricate high-quality Dirac semimetal Cd3As2 microbelts; they have shown ultrahigh mobility up to 1.15 × 105 cm2 V−1 s−1 and pronounced Shubnikov–de Haas oscillations. Such extraordinary features are attributed to the suppression of electron backscattering. This research opens a new avenue for the scalable fabrication of Cd3As2 materials toward exciting electronic applications of 3D Dirac semimetals.
Keyword Cd3As2
Dirac semimetals
Weyl Fermions
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

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