Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Yuan, Xiang, Tang, Lei, Wang, Peng, Chen, Zhigang, Zou, Yichao, Su, Xiaofeng, Zhang, Cheng, Liu, Yanwen, Wang, Weiyi, Liu, Cong, Chen, Fangsheng, Zou, Jin, Zhou, Peng, Hu, Weida and Xiu, Faxian (2015) Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe. Nano Research, 8 10: 3332-3341. doi:10.1007/s12274-015-0833-8

Author Yuan, Xiang
Tang, Lei
Wang, Peng
Chen, Zhigang
Zou, Yichao
Su, Xiaofeng
Zhang, Cheng
Liu, Yanwen
Wang, Weiyi
Liu, Cong
Chen, Fangsheng
Zou, Jin
Zhou, Peng
Hu, Weida
Xiu, Faxian
Title Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe
Journal name Nano Research   Check publisher's open access policy
ISSN 1998-0000
Publication date 2015-08-27
Year available 2015
Sub-type Article (original research)
DOI 10.1007/s12274-015-0833-8
Open Access Status Not Open Access
Volume 8
Issue 10
Start page 3332
End page 3341
Total pages 10
Place of publication Beijing, China
Publisher Tsinghua University Press
Collection year 2016
Language eng
Formatted abstract
Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm2/(V·s) by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 µW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 µs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.
Keyword GaTe
two-dimensional materials
p-n junction
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

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