Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy

Zhang, Zhi, Lu, Zhen-Yu, Chen, Ping-Ping, Lu, Wei and Zou, Jin (2015) Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy. Nanoscale, 7 29: 12592-12597. doi:10.1039/c5nr03503a


Author Zhang, Zhi
Lu, Zhen-Yu
Chen, Ping-Ping
Lu, Wei
Zou, Jin
Title Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy
Journal name Nanoscale   Check publisher's open access policy
ISSN 2040-3372
2040-3364
Publication date 2015-08-07
Year available 2015
Sub-type Article (original research)
DOI 10.1039/c5nr03503a
Open Access Status Not Open Access
Volume 7
Issue 29
Start page 12592
End page 12597
Total pages 6
Place of publication Cambridge, United Kingdom
Publisher Royal Society of Chemistry
Collection year 2016
Language eng
Formatted abstract
In this study, we devised a two-V/III-ratio procedure to control the Au-assisted growth of defect-free InAs nanowires in molecular beam epitaxy. The demonstrated two V/III ratio procedure consists of a first high V/III ratio growth step to prepare the nanowire foundation on the substrate surface, followed by a low V/III ratio step to induce the nanowire growth. By manipulating the V/III ratios in different steps, we have achieved the controlled growth of pure defect-free zinc-blende structured InAs nanowires on the GaAs {[1 with combining macron][1 with combining macron][1 with combining macron]} substrates. This study provides an approach to control not only the crystal structure of semiconductor nanowires, but also their structural qualities.
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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