Arrayed van der waals vertical heterostructures based on 2d gase grown by molecular beam epitaxy

Yuan, Xiang, Tang, Lei, Liu, Shanshan, Wang, Peng, Chen, Zhigang, Zhang, Cheng, Liu, Yanwen, Wang, Weiyi, Zou, Yichao, Liu, Cong, Guo, Nan, Zou, Jin, Zhou, Peng, Hu, Weida and Xiu, Faxian (2015) Arrayed van der waals vertical heterostructures based on 2d gase grown by molecular beam epitaxy. Nano Letters, 15 5: 3571-3577. doi:10.1021/acs.nanolett.5b01058

Author Yuan, Xiang
Tang, Lei
Liu, Shanshan
Wang, Peng
Chen, Zhigang
Zhang, Cheng
Liu, Yanwen
Wang, Weiyi
Zou, Yichao
Liu, Cong
Guo, Nan
Zou, Jin
Zhou, Peng
Hu, Weida
Xiu, Faxian
Title Arrayed van der waals vertical heterostructures based on 2d gase grown by molecular beam epitaxy
Journal name Nano Letters   Check publisher's open access policy
ISSN 1530-6992
Publication date 2015-05-13
Sub-type Article (original research)
DOI 10.1021/acs.nanolett.5b01058
Open Access Status
Volume 15
Issue 5
Start page 3571
End page 3577
Total pages 7
Place of publication Washington, DC, United States
Publisher American Chemical Society
Collection year 2016
Language eng
Abstract Vertically stacking two-dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures on a wafer scale with an atomically sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly efficient photodetector arrays were fabricated, based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust, with a response time of 60 μs. Importantly, the device shows no sign of degradation after 1 million cycles of operation. We also carried out numerical simulations to understand the underlying device working principles. Our study establishes a new approach to produce controllable, robust, and large-area 2D heterostructures and presents a crucial step for further practical applications.
Keyword 2D materials
molecular beam epitaxy
p-n junctions
Van der Waals heterostructure
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: Faculty of Science Publications
School of Mechanical & Mining Engineering Publications
Official 2016 Collection
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Citation counts: TR Web of Science Citation Count  Cited 18 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 22 times in Scopus Article | Citations
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