Evolution of thin protecting Si-layer on Mn0.5Si0.5 layer at low temperatures

Shao, Yuanmin, Wu, Shan, Zhang, Zhi, Zou, Jin and Jiang, Zuimin (2015) Evolution of thin protecting Si-layer on Mn0.5Si0.5 layer at low temperatures. Applied Surface Science, 333 54-58. doi:10.1016/j.apsusc.2015.02.004

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Author Shao, Yuanmin
Wu, Shan
Zhang, Zhi
Zou, Jin
Jiang, Zuimin
Title Evolution of thin protecting Si-layer on Mn0.5Si0.5 layer at low temperatures
Formatted title
Evolution of thin protecting Si-layer on Mn0.5Si0.5 layer at low temperatures
Journal name Applied Surface Science   Check publisher's open access policy
ISSN 0169-4332
1873-5584
Publication date 2015-04-01
Year available 2015
Sub-type Article (original research)
DOI 10.1016/j.apsusc.2015.02.004
Open Access Status File (Author Post-print)
Volume 333
Start page 54
End page 58
Total pages 5
Place of publication Amsterdam, Netherlands
Publisher Elsevier
Collection year 2016
Language eng
Formatted abstract
Evolution of 2-nm-thick protecting Si-layer on amorphous Mn0.5Si0.5 films at elevated temperatures was investigated by using conductive atom force microscopy (CAFM) and other structure and composition characterization methods. At a temperature of 300 °C, a dramatic change was observed in surface morphology with many islands forming on the surface. Those islands were SiO2 islands rather than Si ones. Further studies showed that those islands formed via first oxidation of the Si cap layer followed by the agglomeration of this SiO2 layer. Because Si cap layer has widely been used as protecting materials to prevent the surface from oxidizing and contamination, this study provides an insight on the effectiveness of thin protecting Si-layer at low temperatures.
Keyword Surface protecting Si-layer
Agglomeration
CAFM
Ferromagnetic semiconductor
Deep level
Manganese
Silicon
Iron
Semiconductors
Oxidation
Surfaces
Growth
Copper
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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