Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures

Shi, Suixing, Zhang, Zhi, Lu, Zhenyu, Shu, Haibo, Chen, Pingping, Li, Ning, Zou, Jin and Lu, Wei (2015) Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures. Nanoscale Research Letters, 10 108: 1-8. doi:10.1186/s11671-015-0812-8


Author Shi, Suixing
Zhang, Zhi
Lu, Zhenyu
Shu, Haibo
Chen, Pingping
Li, Ning
Zou, Jin
Lu, Wei
Title Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures
Journal name Nanoscale Research Letters   Check publisher's open access policy
ISSN 1556-276X
1931-7573
Publication date 2015-03-01
Year available 2015
Sub-type Article (original research)
DOI 10.1186/s11671-015-0812-8
Open Access Status DOI
Volume 10
Issue 108
Start page 1
End page 8
Total pages 8
Place of publication Heidelberg, Germany
Publisher SpringerOpen
Collection year 2016
Language eng
Abstract In this paper, we successfully grow GaAs/GaSb core-shell heterostructure nanowires (NWs) by molecular beam epitaxy (MBE). The as-grown GaSb shell layer forms a wurtzite structure instead of the zinc blende structure that has been commonly reported. Meanwhile, a bulgy GaSb nanoplate also appears on top of GaAs/GaSb core-shell NWs and possesses a pure zinc blende phase. The growth mode for core-shell morphology and underlying mechanism for crystal phase selection of GaAs/GaSb nanowire heterostructures are discussed in detail.
Keyword GaSb
Heterostructure nanowire
Core-shell
Wurtzite
Molecular beam epitaxy
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mechanical & Mining Engineering Publications
Official 2016 Collection
 
Versions
Version Filter Type
Citation counts: TR Web of Science Citation Count  Cited 1 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 0 times in Scopus Article
Google Scholar Search Google Scholar
Created: Tue, 31 Mar 2015, 01:29:59 EST by System User on behalf of Materials