Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors

Ullah, Mujeeb, Armin, Ardalan, Tandy, Kristen, Yambem, Soniya D., Burn, Paul L., Meredith, Paul and Namdas, Ebinazar B. (2015) Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors. Scientific Reports, 5 Art No.: 8818: . doi:10.1038/srep08818

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Author Ullah, Mujeeb
Armin, Ardalan
Tandy, Kristen
Yambem, Soniya D.
Burn, Paul L.
Meredith, Paul
Namdas, Ebinazar B.
Title Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors
Journal name Scientific Reports   Check publisher's open access policy
ISSN 2045-2322
Publication date 2015
Sub-type Article (original research)
DOI 10.1038/srep08818
Open Access Status DOI
Volume 5
Issue Art No.: 8818
Total pages 6
Place of publication London United Kingdom
Publisher Nature Publishing Group
Collection year 2016
Language eng
Formatted abstract
Light-emitting field effect transistors (LEFETs) are an emerging class of multifunctional optoelectronic devices. It combines the light emitting function of an OLED with the switching function of a transistor in a single device architecture. The dual functionality of LEFETs has the potential applications in active matrix displays. However, the key problem of existing LEFETs thus far has been their low EQEs at high brightness, poor ON/OFF and poorly defined light emitting area - a thin emissive zone at the edge of the electrodes. Here we report heterostructure LEFETs based on solution processed unipolar charge transport and an emissive polymer that have an EQE of up to 1% at a brightness of 1350 cd/m2, ON/OFF ratio > 104 and a well-defined light emitting zone suitable for display pixel design. We show that a non-planar hole-injecting electrode combined with a semi-transparent electron-injecting electrode enables to achieve high EQE at high brightness and high ON/OFF ratio. Furthermore, we demonstrate that heterostructure LEFETs have a better frequency response (fcut-off = 2.6 kHz) compared to single layer LEFETs. The results presented here therefore are a major step along the pathway towards the realization of LEFETs for display applications.
Keyword Materials for devices
Organic LEDs
Electronics, photonics and device physics
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mathematics and Physics
Official 2016 Collection
 
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