Morphology and Curie temperature engineering in crystalline La0.7Sr0.3MnO3 films on Si by pulsed laser deposition

Nori, Rajashree, Kale, S. N., Ganguly, U., Raju, N. Ravi Chandra, Sutar, D. S., Pinto, R. and Rao, V. Ramgopal (2014) Morphology and Curie temperature engineering in crystalline La0.7Sr0.3MnO3 films on Si by pulsed laser deposition. Journal of Applied Physics, 115 3: 033518-1-033518-11. doi:10.1063/1.4862909

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Author Nori, Rajashree
Kale, S. N.
Ganguly, U.
Raju, N. Ravi Chandra
Sutar, D. S.
Pinto, R.
Rao, V. Ramgopal
Title Morphology and Curie temperature engineering in crystalline La0.7Sr0.3MnO3 films on Si by pulsed laser deposition
Journal name Journal of Applied Physics   Check publisher's open access policy
ISSN 0021-8979
1520-8516
Publication date 2014-01-21
Year available 2014
Sub-type Article (original research)
DOI 10.1063/1.4862909
Open Access Status File (Publisher version)
Volume 115
Issue 3
Start page 033518-1
End page 033518-11
Total pages 11
Place of publication Orono, ME, United States
Publisher Society of Rheology
Collection year 2015
Language eng
Formatted abstract
Of all the colossal magnetoresistant manganites, La0.7Sr0.3MnO3 (LSMO) exhibits magnetic and electronic state transitions above room temperature, and therefore holds immense technological potential in spintronic devices and hybrid heterojunctions. As the first step towards this goal, it needs to be integrated with silicon via a well-defined process that provides morphology and phase control, along with reproducibility. This work demonstrates the development of pulsed laser deposition (PLD) process parameter regimes for dense and columnar morphology LSMO films directly on Si. These regimes are postulated on the foundations of a pressure-distance scaling law and their limits are defined post experimental validation. The laser spot size is seen to play an important role in tandem with the pressure-distance scaling law to provide morphology control during LSMO deposition on lattice-mismatched Si substrate. Additionally, phase stability of the deposited films in these regimes is evaluated through magnetometry measurements and the Curie temperatures obtained are 349 K (for dense morphology) and 355 K (for columnar morphology)—the highest reported for LSMO films on Si so far. X-ray diffraction studies on phase evolution with variation in laser energy density and substrate temperature reveals the emergence of texture. Quantitative limits for all the key PLD process parameters are demonstrated in order enable morphological and structural engineering of LSMO films deposited directly on Si. These results are expected to boost the realization of top-down and bottom-up LSMO device architectures on the Si platform for a variety of applications.
Keyword Manganite thin films
Electrical properties
Oxygen pressure
Silicon
Junction
Design
Xps
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: Non HERDC
School of Chemistry and Molecular Biosciences
 
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Created: Fri, 30 Jan 2015, 10:58:27 EST by Ravi Chandra Raju Nagiri on behalf of School of Chemistry & Molecular Biosciences