Annealing of ion implanted gallium nitride

Tan, H. H., Williams, J. S., Zou, J., Cockayne, D. J. H., Pearton, S. J., Zolper, J. C. and Stall, R. A. (1998) Annealing of ion implanted gallium nitride. Applied Physics Letters, 72 10: 1190-1192.


Author Tan, H. H.
Williams, J. S.
Zou, J.
Cockayne, D. J. H.
Pearton, S. J.
Zolper, J. C.
Stall, R. A.
Title Annealing of ion implanted gallium nitride
Journal name Applied Physics Letters   Check publisher's open access policy
Publication date 1998
Sub-type Article
DOI 10.1063/1.121030
Volume number 72
Issue number 10
ISSN 0003-6951
Start page 1190
End page 1192
Total pages 3
Place of publication New York
Publisher American Institute of Physics
Language eng
Abstract In this paper, we examine Si and Te ion implant damage removal in GaN as a function of implantation dose, and implantation and annealing temperature. Transmission electron microscopy shows that amorphous layers, which can result from high-dose implantation, recrystallize between 800 and 1100 °C to very defective polycrystalline material. Lower-dose implants (down to 5 × 1013 cm – 2), which are not amorphous but defective after implantation, also anneal poorly up to 1100 °C, leaving a coarse network of extended defects. Despite such disorder, a high fraction of Te is found to be substitutional in GaN both following implantation and after annealing. Furthermore, although elevated-temperature implants result in less disorder after implantation, this damage is also impossible to anneal out completely by 1100 °C. The implications of this study are that considerably higher annealing temperatures will be needed to remove damage for optimum electrical properties. ©1998 American Institute of Physics.
Keyword Physics, Applied
Gan
Diodes
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article
Collection: Centre for Microscopy and Microanalysis Publications
 
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