Origin of electric field dependence of the charge mobility and spatial energy correlations in C60-based field effect transistors

Fishchuk, I. I., Kadashchuk, A., Novikov, S. V., Ullah, Mujeeb, Genoe, J., Sariciftci, N. S., Sitter, H. and Baessler, H. (2014) Origin of electric field dependence of the charge mobility and spatial energy correlations in C60-based field effect transistors. Molecular Crystals and Liquid Crystals, 589 1: 18-28. doi:10.1080/15421406.2013.871859


Author Fishchuk, I. I.
Kadashchuk, A.
Novikov, S. V.
Ullah, Mujeeb
Genoe, J.
Sariciftci, N. S.
Sitter, H.
Baessler, H.
Title Origin of electric field dependence of the charge mobility and spatial energy correlations in C60-based field effect transistors
Journal name Molecular Crystals and Liquid Crystals   Check publisher's open access policy
ISSN 1563-5287
1542-1406
Publication date 2014-01-01
Year available 2014
Sub-type Article (original research)
DOI 10.1080/15421406.2013.871859
Volume 589
Issue 1
Start page 18
End page 28
Total pages 11
Place of publication Philadelphia United States
Publisher Taylor and Francis
Collection year 2015
Language eng
Formatted abstract
We report on the influence of the lateral electric field on the charge mobility in organic field-effect transistors (OFET) based on C60 films with multigrain morphology. The experimental data were quantitatively described using a recent analytical model by accounting for the strong local electric fields in a multigrain transistor channel and for the energy correlation effects. To rationalize the presence of a correlated disorder in a non-polar C60 material, we show that randomly oriented permanent dipoles in organic gate dielectric layers can generate a significant dipolar disorder in an adjacent nonpolar semiconductor layer.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mathematics and Physics
Non HERDC
 
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