Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells

Yuan, S., Kim, Y., Tan, H. H., Jagadish, C., Burke, P. T., Dao, L. V., Gal, M., Chan, M. C. Y., Li, E. H., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1998) Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells. Journal of Applied Physics, 83 3: 1305-1311. doi:10.1063/1.366830

Author Yuan, S.
Kim, Y.
Tan, H. H.
Jagadish, C.
Burke, P. T.
Dao, L. V.
Gal, M.
Chan, M. C. Y.
Li, E. H.
Zou, J.
Cai, D. Q.
Cockayne, D. J. H.
Cohen, R. M.
Title Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
Journal name Journal of Applied Physics   Check publisher's open access policy
ISSN 0021-8979
Publication date 1998
Sub-type Article (original research)
DOI 10.1063/1.366830
Volume 83
Issue 3
Start page 1305
End page 1311
Total pages 7
Language eng
Abstract Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photoluminescence, transmission electron microscopy, and quantum well modeling were used to understand the effects of intermixing on the quantum well shape. Residual water in the oxide was found to increase the intermixing, though it was not the prime cause for intermixing. Injection of defects such as group III vacancies or interstitials was considered to be a driving force for the intermixing. Different current densities used in the experimental range to create anodic oxides had little effect on the intermixing. ©1998 American Institute of Physics.
Keyword Physics, Applied
Impurity-free Interdiffusion
Mqw Lasers
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: Centre for Microscopy and Microanalysis Publications
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Created: Mon, 13 Aug 2007, 10:19:37 EST