High-mobility, heterostructure light-emitting transistors and complementary inverters

Ullah, Mujeeb, Tandy, Kristen, Li, Jun, Shi, Zugui, Burn, Paul L., Meredith, Paul and Namdas, Ebinazar B. (2014) High-mobility, heterostructure light-emitting transistors and complementary inverters. ACS Photonics, 1 10: 954-959. doi:10.1021/ph500300n

Author Ullah, Mujeeb
Tandy, Kristen
Li, Jun
Shi, Zugui
Burn, Paul L.
Meredith, Paul
Namdas, Ebinazar B.
Title High-mobility, heterostructure light-emitting transistors and complementary inverters
Journal name ACS Photonics   Check publisher's open access policy
ISSN 2330-4022
Publication date 2014-10
Year available 2014
Sub-type Article (original research)
DOI 10.1021/ph500300n
Open Access Status
Volume 1
Issue 10
Start page 954
End page 959
Total pages 6
Place of publication Washington, DC United States
Publisher American Chemical Society
Collection year 2015
Language eng
Formatted abstract
Light-emitting field effect transistors (LEFETs) are optoelectronic devices that can simultaneously execute light emission and the standard logic functions of a transistor in a single device architecture. In this article, we show that ambipolar LEFETs can be made in a bilayer structure using Super Yellow, a light-emitting polymer layer, and a high-mobility diketopyrrolo-pyrrole-based copolymer as an ambipolar charge-transporting layer. The LEFETs were fabricated in the bottom gate architecture with top-contact, air-stable, symmetric Au–Au electrodes. The devices show light emission in both electron and hole accumulation modes with an external quantum efficiency (EQE) of 0.1% at a brightness of 650 cd/m2 in electron accumulation mode, and an EQE of 0.001% at a brightness of 4 cd/m2 in hole accumulation mode. We have also demonstrated a light-emitting inverter by combining two LEFETs into the inverter architecture. The light-emitting inverter generates both electrical and optical signals with an electrical gain of 112.
Keyword Ambipolar
Organic semiconductor
Light-emitting transistor
Field-effect transistors
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: Centre for Organic Photonics and Electronics
Official 2015 Collection
Version Filter Type
Citation counts: TR Web of Science Citation Count  Cited 4 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 5 times in Scopus Article | Citations
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