Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy

Lu, Zhenyu, Zhang, Zhi, Chen, Pingping, Shi, Suixing, Yao, Luchi, Zhou, Chen, Zhou, Xiaohao, Zou, Jin and Lu, Wei (2014) Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy. Applied Physics Letters, 105 16: 162102.1-162102.4. doi:10.1063/1.4898702

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Author Lu, Zhenyu
Zhang, Zhi
Chen, Pingping
Shi, Suixing
Yao, Luchi
Zhou, Chen
Zhou, Xiaohao
Zou, Jin
Lu, Wei
Title Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
Publication date 2014-10-20
Year available 2014
Sub-type Article (original research)
DOI 10.1063/1.4898702
Open Access Status File (Publisher version)
Volume 105
Issue 16
Start page 162102.1
End page 162102.4
Total pages 4
Place of publication College Park, MD United States
Publisher American Institute of Physics
Collection year 2015
Language eng
Formatted abstract
In this work, the crystal structure of GaAs nanowires grown by molecular beam epitaxy has been tailored only by bismuth without changing the growth temperature and V/III flux ratio. The introduction of bismuth can lead to the formation of zinc-blende GaAs nanowires, while the removal of bismuth changes the structure into a 4H polytypism before it turns back to the wurtzite phase eventually. The theoretical calculation shows that it is the steadiest for bismuth to adsorb on the GaAs(111)B surface compared to the liquid gold catalyst surface and the interface between the gold catalyst droplet and the nanowire, and these adsorbed bismuth could decrease the diffusion length of adsorbed Ga and hence the supersaturation of Ga in the gold catalyst droplet.
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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Created: Tue, 11 Nov 2014, 22:31:14 EST by Zhi Zhang on behalf of Centre for Microscopy and Microanalysis