Structure and quality controlled growth of InAs nanowires through catalyst engineering

Zhang, Zhi, Lu, Zhenyu, Xu, Hongyi, Chen, Pingping, Lu, Wei and Zou, Jin (2014) Structure and quality controlled growth of InAs nanowires through catalyst engineering. Nano Research, . doi:10.1007/s12274-014-0524-x


Author Zhang, Zhi
Lu, Zhenyu
Xu, Hongyi
Chen, Pingping
Lu, Wei
Zou, Jin
Title Structure and quality controlled growth of InAs nanowires through catalyst engineering
Journal name Nano Research   Check publisher's open access policy
ISSN 1998-0124
1998-0000
Publication date 2014-08-23
Sub-type Article (original research)
DOI 10.1007/s12274-014-0524-x
Open Access Status
Total pages 10
Place of publication Beijing, China
Publisher Tsinghua University Press
Collection year 2015
Abstract In this study, the structure and quality controlled growth of InAs nanowires using Au catalysts in a molecular beam epitaxy reactor is presented. By tuning the indium concentration in the catalyst, defect-free wurtzite structure and defect-free zinc blende structure InAs nanowires can be induced. It is found that these defect-free zinc blende structure InAs nanowires grow along (Formula presented.) directions with four low-energy {111} and two {110} side-wall facets and adopt the (Formula presented.) catalyst/nanowire interface. Our structural and chemical characterization and calculations identify the existence of a catalyst supersaturation threshold for the InAs nanowire growth. When the In concentration in the catalyst is sufficiently high, defect-free zinc blende structure InAs nanowires can be induced. This study provides an insight into the manipulation of crystal structure and structure quality of III-V semiconductor nanowires through catalyst engineering.
Keyword (MBE)
Au catalysts
InAs nanowires
Molecular beam epitaxy
Quality
Structure
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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