Palladium catalyzed defect-free 〈110〉 zinc-blende structured InAs nanowires

Xu, Hongyi, Gao, Qiang, Hoe Tan, H., Jagadish, Chennupati and Zou, Jin (2013). Palladium catalyzed defect-free 〈110〉 zinc-blende structured InAs nanowires. In: Nanostructured Semiconductors and Nanotechnology. 2013 MRS Spring Meeting, San Francisco, CA, (95-99). 1 - 5 April 2013. doi:10.1557/opl.2013.990

Author Xu, Hongyi
Gao, Qiang
Hoe Tan, H.
Jagadish, Chennupati
Zou, Jin
Title of paper Palladium catalyzed defect-free 〈110〉 zinc-blende structured InAs nanowires
Conference name 2013 MRS Spring Meeting
Conference location San Francisco, CA
Conference dates 1 - 5 April 2013
Proceedings title Nanostructured Semiconductors and Nanotechnology   Check publisher's open access policy
Journal name Materials Research Society Symposium Proceedings   Check publisher's open access policy
Series Materials Research Society Symposium Proceedings
Publisher Materials Research Society
Publication Year 2013
Year available 2013
Sub-type Fully published paper
DOI 10.1557/opl.2013.990
Open Access Status
ISBN 9781605115283
ISSN 0272-9172
Volume 1551
Start page 95
End page 99
Total pages 5
Collection year 2013
Language eng
Abstract/Summary In this study, Pd thin film is used as catalyst to grow epitaxial InAs nanowires on GaAs(111)B substrate in a metal-organic chemical vapor deposition reactor to explore the growth mechanism and the effects of non-gold catalysts in the growth of III-V epitaxial nanowires. Through detailed morphological, structural and chemical characterization using scanning and transmission electron microscopy, it is found that defect-free zinc-blende structured epitaxial InAs nanowires are grown along the 〈110〉 directions with four {111} sidewall facets forming a diamond shaped cross-section. Furthermore, the interface between the nanowire/catalyst is found to be the uncommon {113} planes. It is anticipated that these zinc-blende structured InAs nanowires are grown via the vapor-liquid-solid mechanism. The defect-free nature of these nanowires arises from the non-〈111〉 growth direction and non-{111} nanowire/catalyst interface.
Q-Index Code E1
Q-Index Status Provisional Code
Institutional Status UQ

Version Filter Type
Citation counts: Scopus Citation Count Cited 0 times in Scopus Article
Google Scholar Search Google Scholar
Created: Tue, 30 Sep 2014, 02:14:39 EST by System User on behalf of School of Mechanical and Mining Engineering