Thin Au/Ge Schottky diodes for detection of chemical reaction induced electron excitation

Nienhaus, H., Weyers, S. J., Gergen, B. and McFarland, E. W. (2002) Thin Au/Ge Schottky diodes for detection of chemical reaction induced electron excitation. Sensors and Actuators B: Chemical, 87 3: 421-424. doi:10.1016/S0925-4005(02)00303-9


Author Nienhaus, H.
Weyers, S. J.
Gergen, B.
McFarland, E. W.
Title Thin Au/Ge Schottky diodes for detection of chemical reaction induced electron excitation
Journal name Sensors and Actuators B: Chemical   Check publisher's open access policy
ISSN 0925-4005
1873-3077
Publication date 2002-12-20
Sub-type Article (original research)
DOI 10.1016/S0925-4005(02)00303-9
Open Access Status Not yet assessed
Volume 87
Issue 3
Start page 421
End page 424
Total pages 4
Place of publication Amsterdam, Netherlands
Publisher Elsevier BV
Language eng
Formatted abstract
Ultra-thin film Au/n-Ge Schottky diodes were used to detect electrons excited by chemisorption of atomic oxygen and atomic hydrogen. The absorption generated a chemicurrent in the diode as ballistic electrons excited by the reaction energy transfer traversed the Schottky barrier. The large-area metal-semiconductor contacts were manufactured under cleanroom conditions by evaporating Au on Ge(0 0 1). By annealing at temperatures between 370 and 400 K under ultrahigh vacuum, the sensitivity to reactive gases may be completely recovered even for samples which were stored under air atmosphere for 1 week or exposed to de-ionized water. The recovery process is explained by desorption of adsorbates and thermal decomposition of oxidized gold layers at the surface.
Keyword Chemicurrent
Gas sensing
Hot electrons
Hydrogen atom
Oxygen atom
Schottky diode
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Chemical Engineering Publications
 
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