Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy

Chu, Chia-Pu, Arafin, Shamsul, Huang, Guan, Nie, Tianxiao, Wang, Kang L., Wang, Yong, Zou, Jin, Qasim, Syed M. and BenSaleh, Mohammed S. (2014) Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy. Journal of Vacuum Science and Technology B, 32 2: . doi:10.1116/1.4865477


Author Chu, Chia-Pu
Arafin, Shamsul
Huang, Guan
Nie, Tianxiao
Wang, Kang L.
Wang, Yong
Zou, Jin
Qasim, Syed M.
BenSaleh, Mohammed S.
Title Selectively grown GaAs nanodisks on Si(100) by molecular beam epitaxy
Journal name Journal of Vacuum Science and Technology B   Check publisher's open access policy
ISSN 1071-1023
2166-2754
Publication date 2014-03
Year available 2014
Sub-type Article (original research)
DOI 10.1116/1.4865477
Open Access Status DOI
Volume 32
Issue 2
Total pages 7
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Collection year 2015
Language eng
Formatted abstract
The authors report the molecular beam epitaxial growth and the structural and optical characterizations of self-assembled/catalyst-free GaAs nanodisks on SiO2 masked Si(100) patterned substrates. Pure zincblende GaAs nanodisks with precise positioning and low defect density are demonstrated by selective area epitaxy. The influence of the growth temperature and deposition duration is investigated. Excellent morphological and structural properties are characterized by scanning electron microscopy and cross-sectional transmission electron microscopy. Defects in the epilayers are reduced by strain relaxation through facets formation and by a lateral overgrowth scheme atop the SiO2 mask which is corroborated by microRaman spectroscopy. In particular, the authors show how the material quality contributes to excellent optical properties observed by microphotoluminescence spectroscopy from 77 K to room temperature.
Keyword Threading dislocations
Buffer layers
Si
Reduction
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article # 02C111

 
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