Observation of enhanced carrier transport properties of Si <100>-oriented whiskers under uniaxial strains

Zheng, Kun, Shao, Ruiwen, Deng, Qingsong, Zhang, Yuefei, Li, Yujie, Han, Xiaodong, Zhang, Ze and Zou, Jin (2014) Observation of enhanced carrier transport properties of Si <100>-oriented whiskers under uniaxial strains. Applied Physics Letters, 104 1: 013111.1-013111.5. doi:10.1063/1.4861425

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Author Zheng, Kun
Shao, Ruiwen
Deng, Qingsong
Zhang, Yuefei
Li, Yujie
Han, Xiaodong
Zhang, Ze
Zou, Jin
Title Observation of enhanced carrier transport properties of Si <100>-oriented whiskers under uniaxial strains
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
Publication date 2014-01-06
Sub-type Article (original research)
DOI 10.1063/1.4861425
Open Access Status File (Publisher version)
Volume 104
Issue 1
Start page 013111.1
End page 013111.5
Total pages 5
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Collection year 2015
Language eng
Abstract In this study, enhancements of the carrier transport properties of p-type 100-oriented Si whiskers are observed under uniaxial tensile and compressive strains. It has been found that over 400 enhancement of electrical conductivity is achieved under a 2 tensile strain, while a 2 compressive strain can only cause ∼80 conductivity enhancement. The enhancements are mainly attributed to the breaking of the degeneracy of the v2 and v1 valence bands induced a reduction of the hole effective mass. This study provides an important insight of how the carrier mobility variation caused by the strain impact on their transport properties.
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Institutional Status UQ

 
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