Growth and characterization of III-V compound semiconductor nanowires

Gao, Q., Tan, H. H., Jackson, H. E., Smith, L. M., Yarrison-Rice, J. M., Zou, J., Johnston, M. and Jagadish, C. (2011). Growth and characterization of III-V compound semiconductor nanowires. In: 16th Opto-Electronics and Communications Conference (OECC), 2011. 16th Opto-Electronics and Communications Conference, OECC 2011, Kaohsiung, Taiwan, (366-367). 4-8 July 2011.

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Name Description MIMEType Size Downloads
Author Gao, Q.
Tan, H. H.
Jackson, H. E.
Smith, L. M.
Yarrison-Rice, J. M.
Zou, J.
Johnston, M.
Jagadish, C.
Title of paper Growth and characterization of III-V compound semiconductor nanowires
Conference name 16th Opto-Electronics and Communications Conference, OECC 2011
Conference location Kaohsiung, Taiwan
Conference dates 4-8 July 2011
Proceedings title 16th Opto-Electronics and Communications Conference (OECC), 2011
Journal name 16th Opto-Electronics and Communications Conference, OECC 2011
Place of Publication Piscataway, NJ United States
Publisher I E E E
Publication Year 2011
Year available 2011
Sub-type Other
Open Access Status
ISBN 9781612842882
1612842887
9789860289749
Start page 366
End page 367
Total pages 2
Collection year 2012
Language eng
Abstract/Summary We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposition. Transmission and scanning electron microscopy, micro-photolumine-scence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and band structure.
Subjects 1705 Computer Networks and Communications
2208 Electrical and Electronic Engineering
3315 Communication
Q-Index Code EX
Q-Index Status Provisional Code
Institutional Status UQ

 
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Created: Wed, 27 Nov 2013, 23:08:49 EST by System User on behalf of School of Engineering