III-V compound semiconductor nanowires

Joyce, H. J., Paiman, S., Gao, Q., Tan, H. Hoe, Kim, Y., Smith, L. M., Jackson, H. E., Yarrison-Rice, J. M., Zhang, X., Zou, J. and Jagadish, C. (2009). III-V compound semiconductor nanowires. In: IEEE Nanotechnology Materials and Devices Conference, 2009. 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009, Traverse City, MI United States, (59-60). 2-5 June 2009. doi:10.1109/NMDC.2009.5167572

Author Joyce, H. J.
Paiman, S.
Gao, Q.
Tan, H. Hoe
Kim, Y.
Smith, L. M.
Jackson, H. E.
Yarrison-Rice, J. M.
Zhang, X.
Zou, J.
Jagadish, C.
Title of paper III-V compound semiconductor nanowires
Conference name 2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009
Conference location Traverse City, MI United States
Conference dates 2-5 June 2009
Proceedings title IEEE Nanotechnology Materials and Devices Conference, 2009
Place of Publication Piscataway, NJ United States
Publisher I E E E
Publication Year 2009
Year available 2009
Sub-type Other
DOI 10.1109/NMDC.2009.5167572
Open Access Status
ISBN 9781424446964
Start page 59
End page 60
Total pages 2
Collection year 2010
Language eng
Abstract/Summary GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.
Subjects 2208 Electrical and Electronic Engineering
2504 Electronic, Optical and Magnetic Materials
Keyword III-V compound semiconductors
Q-Index Code EX
Q-Index Status Provisional Code
Institutional Status UQ

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