The nature and role of trap states in a dendrimer-based organic field-effect transistor explosive sensor

Tang, Guoqiang, Chen, Simon S. Y., Lee, Kwan H., Pivrikas, Almantas, Aljada, Muhsen, Burn, Paul L., Meredith, Paul and Shaw, Paul E. (2013) The nature and role of trap states in a dendrimer-based organic field-effect transistor explosive sensor. Applied Physics Letters, 102 24: . doi:10.1063/1.4810914

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Author Tang, Guoqiang
Chen, Simon S. Y.
Lee, Kwan H.
Pivrikas, Almantas
Aljada, Muhsen
Burn, Paul L.
Meredith, Paul
Shaw, Paul E.
Title The nature and role of trap states in a dendrimer-based organic field-effect transistor explosive sensor
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
Publication date 2013-06-17
Year available 2013
Sub-type Article (original research)
DOI 10.1063/1.4810914
Open Access Status File (Publisher version)
Volume 102
Issue 24
Total pages 5
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Collection year 2014
Language eng
Formatted abstract
We report the fabrication and charge transport characterization of carbazole dendrimer-based organic field-effect transistors (OFETs) for the sensing of explosive vapors. After exposure to para-nitrotoluene (pNT) vapor, the OFET channel carrier mobility decreases due to trapping induced by the absorbed pNT. The influence of trap states on transport in devices before and after exposure to pNT vapor has been determined using temperature-dependent measurements of the field-effect mobility. These data clearly show that the absorption of pNT vapor into the dendrimer active layer results in the formation of additional trap states. Such states inhibit charge transport by decreasing the density of conducting states.
Keyword Fluorescent carbazole dendrimers
Thin-film transistors
Charge transport
Room temperature
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article # 243301

 
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