Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

Sun, W., Guo, Y. N., Xu, H. Y., Liao, Z. M., Zou, J., Gao, Q., Tan, H. H. and Jagadish, C. (2012). Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs. In: 2012 Conference On Optoelectronic and Microelectronic Materials and Devices (Commad 2012). Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Melbourne Australia, (147-148). 11-14December 2012. doi:10.1109/COMMAD.2012.6472403

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Author Sun, W.
Guo, Y. N.
Xu, H. Y.
Liao, Z. M.
Zou, J.
Gao, Q.
Tan, H. H.
Jagadish, C.
Title of paper Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs
Conference name Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)
Conference location Melbourne Australia
Conference dates 11-14December 2012
Proceedings title 2012 Conference On Optoelectronic and Microelectronic Materials and Devices (Commad 2012)
Journal name Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings
Place of Publication Piscataway, NJ United States
Publisher Institute of Electrical and Electronics Engineers
Publication Year 2012
Year available 2012
Sub-type Other
DOI 10.1109/COMMAD.2012.6472403
Open Access Status
ISBN 9781467330459
ISSN 1097-2137
Start page 147
End page 148
Total pages 2
Collection year 2013
Language eng
Formatted Abstract/Summary
In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given
Keyword Gallium arsenide
Microelectronics
Semiconducting gallium
Q-Index Code EX
Q-Index Status Provisional Code
Institutional Status UQ

 
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