Interfacial failure of SiN/GaAs film/substrate bilayers induced by nanoscratch

He, An Shun and Huang, Han (2013) Interfacial failure of SiN/GaAs film/substrate bilayers induced by nanoscratch. Advanced Materials Research, 652-654 1856-1861. doi:10.4028/www.scientific.net/amr.652-654.1856

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Author He, An Shun
Huang, Han
Title Interfacial failure of SiN/GaAs film/substrate bilayers induced by nanoscratch
Journal name Advanced Materials Research   Check publisher's open access policy
ISSN 1022-6680
ISBN 9783037856208
Publication date 2013
Year available 2013
Sub-type Article (original research)
DOI 10.4028/www.scientific.net/amr.652-654.1856
Volume 652-654
Start page 1856
End page 1861
Total pages 6
Editor Zhengyi Jiang
Xianghua Liu
Sihai Jiao
Jingtao Han
Place of publication Beihai, China
Collection year 2014
Language eng
Abstract The failure characteristics of silicon nitride thin film deposited on GaAs substrate were investigated by use of nanoscratch. It was found that the film started to failvia delamination or buckling, which should beattributed to interfacial shear stress. The cracks were then formed and propagated around the edge of the delaminated film before it was chipped away by the moving tip. A normal load of 6.5 mN, corresponding to a depth of 150 nm, was found to be the critical threshold for theinterfacial failure. The fracture energy release rateof the film/substrate interface, or the work of adhesion, was calculated as 2.90 J/m2.
Keyword Silicon nitride
Thin film
Gallium arsenide
Nanoscratch
Adhesion
Delamination
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mechanical & Mining Engineering Publications
Official 2014 Collection
 
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Created: Sun, 11 Aug 2013, 00:03:18 EST by System User on behalf of School of Mechanical and Mining Engineering