This thesis illustrates the physics-based modeling of 2-D oxidation in VLSI technology with the use of PDEase2D, a numerical differential equation solver. With PDEase2D, simulations on diffusion processes during oxidation were done to evaluate the oxidation process of the fabrication process. The purpose of this thesis is to investigate the effect of oxidation process in VLSI technology.
The definition and kinetics of oxidation, the physics of semiconductors for diffusion and the implementation of numerical simulation system were described. (Partial) differential equations and some basic equations are included together with the descriptions of oxidation process as to make it clearer and gain better understand to the reader.
The oxidation process in VLSI technology was simulated using PDEase2D. Results were successfully obtained, analyzed and presented as tables, graphs and plots as well as discussions. Only 2-D oxidation has been simulated, as this is the aim of this thesis.
With the analyzed results, reader should be able to understand how oxidation affects VLSI technology and how it affects the fabrication process. Other numerical solvers can also be used to do the simulations so as to compare the results obtained by PDEase2D.