Numerical simulation of SOI device using MEDICI

Ng, Chye Huat Keith (1999). Numerical simulation of SOI device using MEDICI B.Sc Thesis, School of Computer Science and Electrical Engineering, The University of Queensland.

       
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Author Ng, Chye Huat Keith
Thesis Title Numerical simulation of SOI device using MEDICI
School, Centre or Institute School of Computer Science and Electrical Engineering
Institution The University of Queensland
Publication date 1999-01-01
Thesis type B.Sc Thesis
Supervisor Dr. Y.T.Yeow
Total pages 63
Language eng
Subjects 0906 Electrical and Electronic Engineering
Formatted abstract

As the feature sizes of MOS technologies are scaled to smaller and smaller dimensions, considerable challenges arise in the area of device design. Recent literatures have proved that the silicon-on-insulator (SOI) technology can provide additional leverage in terms of performance and scalability for the mainstream digital applications.

Silicon-on-insulator (SOI) MOSFETs are well known for their advantages over silicon bulk MOSFETs. SOI demonstrates significant improvements, which are fundamentally derived from the capability of total electrical isolation of silicon areas and from the qualitative reduction of junction areas.

This thesis presents the detailed characterization and analysis of the SOI device. The fabrication technologies of the SOI structure are reviewed in terms of material synthesis, processing variants, advantages and drawbacks. Among the SOI technologies, SIMOX is considered to be the most advanced and promising for high-density CMOS circuits.

In order to develop a better understanding of the SOI device, numerical simulations using TMA MEDICI, have been used to investigate the I-V characteristics, potential distributions and the C-V characteristics of a SOI NMOSFET.

Keyword Silicon-on-insulator (SOI) technology
TMA MEDICI
SIMOX

Document type: Thesis
Collection: UQ Theses (non-RHD) - UQ staff and students only
 
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