This thesis is an investigation of the Fowler Nordheim tunneling current in metaloxide semiconductor (MOS) structures. Electrons will tunnel through a barrier in the presence of high electric field. In Fowler Nordheim tunneling, the shape of tunneling barrier depends on the trapped charge at its location in the oxide.
This thesis will analysing and discussing the tunneling current density versus voltage (J-Vg) of Fowler-Nordheim tunneling current in MOS structure and comparing these with experimental results obtained from devices fabricated. The effect of the trapped charge in MOS structure will also be investigated. In addition, the affect of the dopant concentration and the minority lifetime to the current density will also be investigated.
MEDICI is a simulation program for two-dimensional devices. It will done all the calculation and simulation works.