Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors

Pal, Bhola N., Dhar, Bal Mukund, See, Kevin C. and Katz, Howard E. (2009) Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors. Nature Materials, 8 11: 898-903. doi:10.1038/NMAT2560


Author Pal, Bhola N.
Dhar, Bal Mukund
See, Kevin C.
Katz, Howard E.
Title Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors
Journal name Nature Materials   Check publisher's open access policy
ISSN 1476-1122
1476-4660
Publication date 2009-11
Sub-type Article (original research)
DOI 10.1038/NMAT2560
Volume 8
Issue 11
Start page 898
End page 903
Total pages 6
Place of publication London, United Kingdom
Publisher Nature Publishing Group
Language eng
Formatted abstract
Sodium beta-alumina (SBA) has high two-dimensional conductivity, owing to mobile sodium ions in lattice planes, between which are insulating AlOx layers. SBA can provide high capacitance perpendicular to the planes, while causing negligible leakage current owing to the lack of electron carriers and limited mobility of sodium ions through the aluminium oxide layers. Here, we describe sol–gel-beta-alumina films as transistor gate dielectrics with solution-deposited zinc-oxide-based semiconductors and indium tin oxide (ITO) gate electrodes. The transistors operate in air with a few volts input. The highest electron mobility, 28.0 cm2 V−1 s−1, was from zinc tin oxide (ZTO), with an on/off ratio of 2×104. ZTO over a lower-temperature, amorphous dielectric, had a mobility of 10 cm2 V−1 s−1. We also used silicon wafer and flexible polyimide–aluminium foil substrates for solution-processed n-type oxide and organic transistors. Using poly(3,4-ethylenedioxythiophene) poly(styrenesulphonate) conducting polymer electrodes, we prepared an all-solution-processed, low-voltage transparent oxide transistor on an ITO glass substrate.
Keyword Thin film transistors
High electron mobility
High performance
Flexible electronics
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Mathematics and Physics
 
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