Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Liao, Zhi-Ming, Chen, Zhi-Gang, Lu, Zhen-Yu, Xu, Hong-Yi, Guo, Ya-Nan, Sun, Wen, Zhang, Zhi, Yang, Lei, Chen, Ping-Ping, Lu, Wei and Zou, Jin (2013) Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy. Applied Physics Letters, 102 6: 063106.1-063106.5. doi:10.1063/1.4792053

Attached Files (Some files may be inaccessible until you login with your UQ eSpace credentials)
Name Description MIMEType Size Downloads
UQ293972_OA.pdf Full text (open access) application/pdf 1.46MB 0

Author Liao, Zhi-Ming
Chen, Zhi-Gang
Lu, Zhen-Yu
Xu, Hong-Yi
Guo, Ya-Nan
Sun, Wen
Zhang, Zhi
Yang, Lei
Chen, Ping-Ping
Lu, Wei
Zou, Jin
Title Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy
Formatted title
Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
Publication date 2013-02
Year available 2013
Sub-type Article (original research)
DOI 10.1063/1.4792053
Open Access Status File (Publisher version)
Volume 102
Issue 6
Start page 063106.1
End page 063106.5
Total pages 5
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Collection year 2014
Language eng
Formatted abstract
GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.
Keyword Liquid-solid mechanism
Nanowire growth
Surfaces
Fabrication
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
Versions
Version Filter Type
Citation counts: TR Web of Science Citation Count  Cited 15 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 13 times in Scopus Article | Citations
Google Scholar Search Google Scholar
Created: Sun, 17 Mar 2013, 00:45:00 EST by System User on behalf of Materials