Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films

Iacopi, Francesca, Walker, Glenn, Wang, Li, Malesys, Laura, Ma, Shujun, Cunning, Benjamin V. and Iacopi, Alan (2013) Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films. Applied Physics Letters, 102 1: 011908.1-011908.4. doi:10.1063/1.4774087

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Author Iacopi, Francesca
Walker, Glenn
Wang, Li
Malesys, Laura
Ma, Shujun
Cunning, Benjamin V.
Iacopi, Alan
Title Orientation-dependent stress relaxation in hetero-epitaxial 3C-SiC films
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
Publication date 2013-01
Sub-type Article (original research)
DOI 10.1063/1.4774087
Open Access Status File (Publisher version)
Volume 102
Issue 1
Start page 011908.1
End page 011908.4
Total pages 4
Place of publication College Park, MD., United States
Publisher American Institute of Physics
Collection year 2014
Language eng
Formatted abstract
Residual stresses in epitaxial 3C-SiC films on silicon, for chosen growth conditions, appear determined by their growth orientation. Stress evaluation locally with Raman spectroscopy, and across a 150 mm wafer with curvature measurements, indicate that thin films can be grown on Si(100) with residual tensile stresses as low as 150 MPa. However, films on Si(111) retain a considerably higher stress, around 900 MPa, with only minor decrease versus film thickness. Stacking faults are indeed geometrically a less efficient relief mechanism for the biaxial strain of SiC films grown on Si(111) with 〈111〉 orientation. Residual stresses can be tuned by the epitaxial process temperatures
Keyword Chemical vapor deposition
Raman spectroscopy
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mechanical & Mining Engineering Publications
Official 2014 Collection
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Citation counts: TR Web of Science Citation Count  Cited 26 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 24 times in Scopus Article | Citations
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